Graphene under hydrostatic pressure

In-situ high pressure Raman spectroscopy is used to study monolayer, bilayer and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behaviour as a function of graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell to 8 GPa, and show that the properties of graphene under compression are intrinsically similar to graphite. Our results demonstrate the differing effects of uniaxial and biaxial strain on the electronic bandstructure.Comment: Accepted in Physical Review B with minor change

Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon

From Wiley via Jisc Publications RouterHistory: received 2021-06-27, rev-recd 2021-09-04, pub-electronic 2021-09-17Article version: VoRPublication status: PublishedFunder: Department of Science and Technology (DOST), Government of the PhlippinesFunder: Fundação para a Ciência e a Tecnologia in Portugal; Grant(s): UIDB/50025/2020, UIDP/50025/2020The subject of hydrogen–boron interactions in crystalline silicon is revisited with reference to light and elevated temperature‐induced degradation (LeTID) in boron‐doped solar silicon. Ab initio modeling of structure, binding energy, and electronic properties of complexes incorporating a substitutional boron and one or two hydrogen atoms is performed. From the calculations, it is confirmed that a BH pair is electrically inert. It is found that boron can bind two H atoms. The resulting BH2 complex is a donor with a transition level estimated at E c–0.24 eV. Experimentally, the electrically active defects in n‐type Czochralski‐grown Si crystals co‐doped with phosphorus and boron, into which hydrogen is introduced by different methods, are investigated using junction capacitance techniques. In the deep‐level transient spectroscopy (DLTS) spectra of hydrogenated Si:P + B crystals subjected to heat‐treatments at 100 °C under reverse bias, an electron emission signal with an activation energy of ≈0.175 eV is detected. The trap is a donor with electronic properties close to those predicted for boron–dihydrogen. The donor character of BH2 suggests that it can be a very efficient recombination center of minority carriers in B‐doped p‐type Si crystals. A sequence of boron–hydrogen reactions, which can be related to the LeTID effect in Si:B is proposed

Graphene oxide integrated silicon photonics for detection of vapour phase volatile organic compounds

From Springer Nature via Jisc Publications RouterHistory: received 2020-01-07, accepted 2020-05-17, registration 2020-05-20, pub-electronic 2020-06-12, online 2020-06-12, collection 2020-12Publication status: PublishedAbstract: The optical response of a graphene oxide integrated silicon micro-ring resonator (GOMRR) to a range of vapour phase Volatile Organic Compounds (VOCs) is reported. The response of the GOMRR to all but one (hexane) of the VOCs tested is significantly higher than that of the uncoated (control) silicon MRR, for the same vapour flow rate. An iterative Finite Difference Eigenmode (FDE) simulation reveals that the sensitivity of the GO integrated device (in terms of RIU/nm) is enhanced by a factor of ~2, which is coupled with a lower limit of detection. Critically, the simulations reveal that the strength of the optical response is determined by molecular specific changes in the local refractive index probed by the evanescent field of the guided optical mode in the device. Analytical modelling of the experimental data, based on Hill-Langmuir adsorption characteristics, suggests that these changes in the local refractive index are determined by the degree of molecular cooperativity, which is enhanced for molecules with a polarity that is high, relative to their kinetic diameter. We believe this reflects a molecular dependent capillary condensation within the graphene oxide interlayers, which, when combined with highly sensitive optical detection, provides a potential route for discriminating between different vapour phase VOCs

Indium‐Doped Silicon for Solar Cells—Light‐Induced Degradation and Deep‐Level Traps

From Wiley via Jisc Publications RouterHistory: received 2021-02-28, rev-recd 2021-06-11, pub-electronic 2021-07-21Article version: VoRPublication status: PublishedFunder: EPSRC (UK); Grant(s): EP/TO25131/1Funder: Department of Science and Technology (DOST), Government of the PhlippinesFunder: Fundação para a Ciência e a Tecnologia; Id: http://dx.doi.org/10.13039/100008382; Grant(s): UIDB/50025/2020, UIDP/50025/2020Indium‐doped silicon is considered a possible p‐type material for solar cells to avoid light‐induced degradation (LID), which occurs in cells made from boron‐doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium‐related LID are examined and a deep donor is detected, which is attributed to a negative‐U defect believed to be InsO2. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron‐doped material is related to the BsO2 defect that is a precursor of the center responsible for BO LID. The electronic properties of InsO2 are determined and compared to those of the BsO2 defect. Structures of the BsO2 and InsO2 defects in different charges states are found using first‐principles modeling. The results of the modeling can explain both the similarities and the differences between the BsO2 and InsO2 properties

The low frequency receivers for SKA 1-low: Design and verification

The initial phase of the Square Kilometre Array (SKA) [1] is represented by a ~10% instrument and construction should start in 2018. SKA 1-Low, a sparse Aperture Array (AA) covering the frequency range 50 to 350 MHz, will be part of this. This instrument will consist of 512 stations, each hosting 256 antennas creating a total of 131,072 antennas. A first verification system towards SKA 1-Low, Aperture Array Verification System 1 (AAVSl), is being deployed and validated in 2017

Growth and spectroscopic studies of CdS/CdSe single layers and superlattice structures

SIGLEAvailable from British Library Document Supply Centre- DSC:DX171780 / BLDSC - British Library Document Supply CentreGBUnited Kingdo

Electron transport in InSb/AlInSb semiconductor heterostructures

InSb has the lowest bulk electron effective mass and the narrowest band gap of the III-V semiconductors, as well as a large dielectric constant and Lande g-factor, as a result of strong spin orbit coupling. These properties make it an exciting candidate for many different applications including high speed electronics and spintronics.This thesis presents a series of investigations on InSb/AlInSb quantum well (QW) heterostructures. The nature of transport through samples is characterised using magneto-transport measurements including Hall measurement, quantum Hall measurement, and Shubnikov de Haas oscillations. The QW 2 dimensional electron gas (2DEG) carrier densities and mobilities are extracted along with carrier densities and mobilities for transport parallel to the 2DEG. The mobilities are explained in terms of the various scattering mechanisms postulated to be present. The importance of thermally generated carriers in the lower AlInSb barrier material and the role of screening by carriers within the delta-doping plane are considered. A surface gate incorporating a gate dielectric is shown to significantly modify the transport properties and results in an increased mobility over ungated structures with the same carrier density.The measurement and analysis of transport into a 2DEG (Schottky barrier) is also presented and this transport modelled in the thermionic emission regime (by incorporation of an ideality factor) and the tunnelling regime. Gate electrodes are then used to confine the electrons in the 2DEG further to 1D. Conductance measurements are presented on split gates, demonstrating well formed conductance quantisation steps. The sensitivity of the steps presented suggest that split gates on InSb/AlInSb heterostructures could make suitable charge detectors in an electron spin qubit, an application which pushes InSb into being a practical candidate for quantum information devices.EThOS - Electronic Theses Online ServiceGBUnited Kingdo